bias resistor t ransistor pnp silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping f14 10 10 3000/tape & reel leshan radio company, ltd. ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. s-ldtb114elt1g inverter , interface, driver features ? ? applications ldtb114elt1g s-ldtb114elt3g f14 10 10 z a b solute maximum ratings (t a= 25 c) 1 2 3 sot-23 3 collec t or 2 emitter 1 base r1 r2 limits parameter symbol unit 1) bu il t-i n bi as re si sto r s en ab le th e co n f i g u r a t ion of an in ve rte r ci rcu i t w i thou t conn ecting ex te rn al inp u t resistors (see equivalent circuit). 2 ) t he b i as re sisto r s c ons ist of th i n -fi l m r e si stor s w i t h c o m p l e te is ol ati on t o a l l o w p o sit i ve b i as i ng of th e in p u t. t h e y al so hav e th e a d v a nt a ge o f a l mo st com p le te l y eliminating p a rasitic ef fect s. 3) on ly the on / o f f con d i t io ns n eed to b e se t fo r op eratio n , making the device design easy . v cc ? 50 ? 40 to + 10 ? 500 200 150 ? 55 to + 150 v v in v ma mw i c p d tj tstg c c supply voltage input voltage output current power dissipation junction temperature storage temperature z electrical ch aracteristics (t a= 25 c) parameter symbol v i(off) v i(on) v o(on) i i i o(off) r 1 g i r 2 /r 1 f t min. ? ? 3 ? ? ? 7 56 0.8 ? ? ? ? 0.1 ? ? 10 ? 1 200 ? 0.5 ? ? 0.3 ? 0.88 ? 0.5 13 ? 1.2 ? v v cc = ? 5v, i o = ? 100 a v o = ? 0.3v, i o = ? 10ma i o /i i = ? 50ma/ ? 2.5ma v i = ? 5v v cc = ? 50v, v i =0v v o = ? 5v, i o = ? 50ma v ce = ? 10v, i e =50ma, f=100mhz v ma a k ? ? ?? ? mhz typ. max. unit conditions ? input voltage output voltage input current output current input resistance dc current gain resistance ratio transition frequency ? characteristics of built-in transistor rev.o 1/3 ldtb114elt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-ldtb114elt1g ldtb114elt3g
leshan radio company, ltd. z electrical ch aracteristic cu rv es ;s-ldtb114elt1g input voltage : v i (on) ( v) output current : i o ( a ) -100m -200m -500m -1 -2 -10 -20 -5 -50 -100 v o = ? 0.3v -1m -500 -2m -5m -10m -20m -50m -100m -200m -500m fig.1 input voltage vs. output current (on characteristics) ta = ? 40 c 25 c 100 c -0.5 -1 -1.5 -2 -2.5 -3 0 -10m -5m -2m -1m -500 -200 -100 -50 -20 -10 -5 -2 -1 v cc = ? 5v input voltage : v i (off) ( v) output current : io ( a) fig.2 output current vs. input voltage (off characteristics) ta= 100 c 25 c ? 40 c v o = ? 5v dc current gain : g i output current : i o ( a) 1k 500 200 100 50 20 10 5 2 1 - 1m - 500 - 2m -5m -10m -20m -50m -100m -200m -500m fig.3 dc current gain vs. output current ta=100 c 25 c ? 40 c l o /l i =20 -1 -500m -200m -100m -10m -50m -5m -20m -2m -1m output current : i o ( a) output voltage : v o (on) ( v) - 1m - 500 - 2m -5m -10m -20m -50m -100m -200m -500m fig.4 output voltage vs. output current ta=100 c 25 c ? 40 c rev.o 2/3 ldtb114elt1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev.o 3/3 ;s-ldtb114elt1g ldtb114elt1g
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